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Advance Technical Information
TrenchT2 TM HiperFET TM
Power MOSFET
IXFH400N075T2
IXFT400N075T2
V DSS
I D25
R DS(on)
= 75V
= 400A
≤ 2.3m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-247 (IXFH)
Symbol
V DSS
Test Conditions
T J = 25 ° C to 175 ° C
Maximum Ratings
75
V
G
D
S
D (Tab)
V DGR
T J = 25 ° C to 175 ° C, R GS = 1M Ω
75
V
V GSS
V GSM
Continuous
Transient
± 20
± 30
V
V
TO-268 (IXFT)
I D25
I LRMS
I DM
I A
E AS
T C = 25 ° C (Chip Capability)
Lead Current Limit, RMS
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
400
160
1000
200
1.5
A
A
A
A
J
G
S
D (Tab)
dv/dt
P D
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175°C
T C = 25 ° C
15
1000
V/ns
W
G = Gate
S = Source
D = Drain
Tab = Drain
T J
T JM
T stg
-55 ... +175
175
-55 ... +175
° C
° C
° C
Features
International Standard Packages
T L
T sold
M d
Weight
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
300
260
1.13 / 10
6
4
° C
° C
Nm/lb.in.
g
g
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Fast Intrinsic Diode
Low R DS(on)
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 1mA
Characteristic Values
Min. Typ. Max.
75
V
Advantages
Easy to Mount
Space Savings
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
2.0
4.0
± 200
25
V
nA
μ A
High Power Density
Applications
T J = 150 ° C
1.5 mA
DC/DC Converters and Off-line UPS
R DS(on)
V GS = 10V, I D = 100A, Notes 1 & 2
2.3 m Ω
Primary- Side Switch
High Current Switching Applications
? 2009 IXYS CORPORATION, All Rights Reserved
DS100221(12/09)
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